1200V NPT TRENCH IGBT
DESCRIPTION
The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar
Transistor. it uses UTC’s advanced technology to provide customers
with high switching speed, high avalanche ruggedness, low saturation
voltage and low switching loss, etc.
The UTC UTG25N120 is suitable for the resonant or soft switching
applications.
FEATURES
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C |