P-CHANNEL POWER MOSFET
DESCRIPTION
The UT3P03Z uses UTC advanced technology to provide excellent
RDS(ON), low gate charge and operated with low gate voltages. This
device can be applied to general-purpose switching devices applications.
FEATURES
* RDS(ON) ≤ 100 mΩ@ VGS=-10V, ID=-1.5A
RDS(ON) ≤ 140 mΩ@ VGS=-4.5V, ID=-1.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness |