100V N-Channel MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor
control.
FEATURES
* RDS(ON) = 0.1 Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness |
