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Home > Power Mosfet
UD4606 Datasheet

DUAL ENHANCEMENT MODE   (N-CHANNEL/P-CHANNEL)
 
 
DESCRIPTION
 
The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications.
 

 
FEATURES
 
* N-Channel: 30V/6.9A
 RDS(ON) = 22.5 mΩ (typ.) @VGS =10V 
 RDS(ON) = 34.5 mΩ (typ.) @VGS=4.5V 
* P-Channel: -30V/-6A
 RDS(ON) = 28 m Ω (typ.) @VGS= -10V 
 RDS(ON) = 44 mΩ (typ.) @VGS= -4.5V
* Reliable and rugged 
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