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Home > Power Mosfet
UT3414 Datasheet
 
N-CHANNEL ENHANCEMENT MODE
 
 
 
DESCRIPTION
 
The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in
PWM applications.
 
 
 
FEATURES
 
 
* RDS(ON) < 50mΩ @VGS = 4.5V
* RDS(ON) < 63mΩ @VGS = 2.5V
* RDS(ON) < 87mΩ @VGS = 1.8V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
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