N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC UT3416 is advanced n-channel enhancement
MOSFET which can provide the designer with the best combination of excellent RDS (ON) , low gate charge and low gate voltages as low
as 1.8V.When it is used as a load sw itch or in PWM application, the UTC UT3416 can be considered as an ideal.
FEATURES
* VDS =20 V
* ID =6.5 A
* RDS(ON)< 22 mΩ @VGS = 4.5 V
* RDS(ON) < 26 mΩ @VGS = 2.5 V
* RDS(ON) < 34 mΩ @VGS = 1.8 V |
