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Home > Power Mosfet
UTM2054 Datasheet

N-CHANNEL ENHANCEMENT MODE
 
 

 
DESCRIPTION
 
The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

 
FEATURES
 
* RDS(ON)= 35m Ω @VGS=10V
* RDS(ON)= 45m Ω @VGS=4.5V
* RDS(ON)= 110mΩ @VGS=2.5V
* Ultra low gate charge ( typical 11.5 nC )  
* Low reverse transfer capacitance ( CRSS = typical 60 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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