-3.3A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC UT2315 is P-Channel enhancement mode power field

effect transistors are using trench DMOS technology. This advanced

technology has been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand

high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching applications.

FEATURES

* Extremely low on-resistance due to high density cell

* Perfect thermal performance and electrical capability with

advanced technology of trench process