2A, 500V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC F2N50-MH is a N-channel power MOSFET
adopting UTC’s advanced technology to provide customers
with DMOS, planar stripe technology. This technology is
designed to meet the requirements of the minimum on-state
resistance and perfect switching performance. It also can
withstand high energy pulse in the avalanche and
communication mode.
The UTC F2N50-MH can be used in applications, such as
active power factor correction, high efficiency switched mode
power supplies, electronic lamp ballasts based on half bridge
topology.

FEATURES

* RDS(ON) ≤ 5.2 Ω @ VGS=10V, ID=1.0A
* 100% avalanche tested
* High switching speed