2A, 1000V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 2N100-FC provide excellent R DS(ON) , low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

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FEATURES

* R DS(ON)  ≤ 12 Ω @ V GS =10V, I D =1.0A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness