1A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC F1N60Q-TD is a high voltage power MOSFET

combines advanced trench MOSFET designed to have better

characteristics, such as fast switching time, low gate charge, low

on-state resistance and high rugged avalanche characteristics. This

power MOSFET is usually used in high speed switching applications

of switching power supplies and adaptors.

FEATURES

* RDS(ON) ≤ 8.6 Ω @ VGS=10V, ID=0.5A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness