650V, SMPS N-CHANNEL IGBT.

DESCRIPTION

Ths UPG15N65 is a Insulated Gate Bipolar Transistor (IGBT)

features a robust and cost effective Non−Punch Through (NPT)

Trench construction, and provides superior performance in

demanding switching applications.

Offering both low on state voltage and minimal switching loss,

the IGBT is well suited for motor drive control and other hard

switching applications.

FEATURES

* VCE(SAT) ≤ 1.7V @ IC=15A, VGE=15V

* 650V Switching SOA Capability

* Low Saturation Voltage Resulting in Low Conduction Loss

* Low Switching Loss in Higher Frequency Applications

* 5μs Short Circuit Capability

* Excellent Current