P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

* RDS(ON) ≤ 52 mΩ @ VGS=-10V, ID =-10A

RDS(ON) ≤ 90 mΩ @ VGS=-4.5V, ID =-10A

* Low Capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified