P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UT20PP03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-10A
* RDS(ON) ≤ 27.5 mΩ @ VGS=-4.5V, ID=-10A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified |