60A, 100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET

DESCRIPTION

The UTC USG60N10 is a N-channel Power MOSFET, it uses

UTC’s advanced technology to provide the customers with low

RDS(ON) characteristic by high cell density trench technology.

The UTC USG60N10 is suitable for high efficiency

synchronous rectification in SMPS, UPS, hard switched and high

frequency circuits.

FEATURES

* RDS(ON) ≤ 10.5 mΩ @ VGS=10V, ID=30A

RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A

* Optimized for high speed switching, Logic level

* Enhanced Body diode dv/dt capability

* Enhanced Avalanche Ruggednessy