DUAL ENHANCEMENT MODE  (N-CHANNEL / P-CHANNEL)

DESCRIPTION

The UTC F17NP055 incorporates a N-channel MOSFET and a

P-channel MOSFET enhancement mode silicon gate power

MOSFET with Fast Body Diode. is designed high voltage, high

speed power switching applications such, is designed to have better

characteristics. such as fast switching time, low gate charge, low

on-state resistance and have a high rugged avalanche

characteristics.

This power MOSFET is usually used at high speed switching

applications in power supplies, PWM motor controls, high efficient

AC to DC converters and bridge circuits.

FEATURES

* N-CHANNEL: 55V/17A

RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A

* P-CHANNEL: -55V/-17A

RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.5A

* Fast body diode MOSFET technology

* High switching speed