8.0A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N100-FCQ provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 2.9 Ω @ VGS=10V, ID=4.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness |