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Home > IGBT
UTG80N65-S Datasheet
  

650V TRENCH GATE FIELD-STOP IGBT

 

 

DESCRIPTION

 

The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate

Bipolar Transistor. it uses UTC’s advanced technology to provide

customers with high switching speed, low saturation voltage and low

switching loss, etc.

The UTC UTG80N65-S is suitable for the resonant or soft

switching applications.

 

FEATURES

 

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=80A, VGE=15V

(TC =25°C)

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