N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to higher

switching frequencies.

FEATURES

* RDS(ON) ≤ 3.5 Ω @ VGS=10 V, ID=0.22A

RDS(ON) ≤ 6.0 Ω @ VGS=4.5V, ID=0.22A

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified