200A, 85V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC USGR028N85 is a uses Super Trench II technology

that is uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and switching

power losses are minimized due to an extremely low combination

of RDS(ON) and Qg. This device is ideal for high-frequency

switching and synchronous rectification.

FEATURES

* RDS(ON) ≤ 2.8 mΩ @ VGS=10V, ID=50A

* Excellent gate charge

* Very low on-resistance RDS(ON)

* High switching speed

* Low reverse transfer capacitance