N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

DESCRIPTION

This UT02NN06VZ employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to higher

switching frequencies.

FEATURES

* RDS(ON) ≤ 4.0 Ω @ VGS=4.5V, ID=0.22A

RDS(ON) ≤ 5.0 Ω @ VGS=2.5V, ID=0.20A

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified