2.0A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC F2N60A-LC1 is a N-Channel enhancement mode

silicon gate power MOSFET with Fast Body Diode, is designed

high voltage, high speed power switching applications such, is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient AC to DC converters and bridge

circuits.

FEATURES

* RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=1.0A

* High Switching Speed

* 100% Avalanche Tested