120A, 40V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC UTR040N04 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

FEATURES

* RDS(ON) ≤ 4.0 mΩ @ VGS=10V, ID=60A

* RDS(ON) ≤ 6.0 mΩ @ VGS=4.5V, ID=60A

* High density cell design for ultra low RDS(ON)

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation