2.2A, 60V SHIELDED GATE N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC UT306S is N-Channel MOSFET produced using

advanced Power process that incorporates Shielded Gate

technology. This process has been optimized for RDS(ON), switching

performance and ruggedness.

FEATURES

* RDS(ON) ≤ 235 mΩ @ VGS=10V, ID=2.2A

  RDS(ON) ≤ 280 mΩ @ VGS=4.5V, ID=1.3A

* Simple drive requirement

* Small package outline

* Fast Switching Speed