100A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC UTR040N03M uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

FEATURES

* For TO-252/ PDFN5×6

RDS(ON) ≤ 4.0 mΩ @ VGS=10V, ID=40A

* For SOP-8

RDS(ON) ≤ 4.0 mΩ @ VGS=10V, ID=20A

* For TO-252/ PDFN5×6/SOP-8

RDS(ON) ≤ 7.0 mΩ @ VGS=4.5V, ID=20A

* High density cell design for ultra low RDS(ON)

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation