80A, 150V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

DESCRIPTION

The UTC USG80N15H is a N-channel Power MOSFET, it

uses UTC’s advanced technology to provide the customers with

low RDS(ON) characteristic by high cell density trench technology.

FEATURES

* RDS(ON) ≤ 13.5 mΩ @ VGS=10V, ID=40A

* Extremely low on-resistance RDS(ON)

* Excellent Low Ciss