GALLIUM NITRIDE (GaN) ENHANCEMENT-MOD POWER TRANSISTOR

DESCRIPTION

The UTC UGN65R360 is a gallium nitride (GaN) FETs with

integrated gate drivers and GaN power devices offers the most

efficient GaN solution with lifetime reliability and cost advantages.

GaN transistors switch much faster than silicon MOSFETs, offering

the potential to achieve lower-switching losses.

FEATURES

* RDS(ON) ≤ 480 mΩ @ VGS=6.0V, ID=2.0A

* High BVDSS (>650V) Rating for Power Application

* Low Input Capacitance; Low FOM

* No reverse recovery charge

* Reverse conduction capability