150A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

The UTC UT150N03 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It can

be used in a wide variety of applications.

FEATURES

TO-220

* RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A

* RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A

PDFN5×6

* RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A

* RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A

* Excellent gate charge

* Very low on-resistance RDS(ON)