150A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET

DESCRIPTION

The UTC UT150N06M is a N-channel Power MOSFET, it uses

UTC’s advanced technology to provide the customers with low

RDS(ON) characteristic by high cell density trench technology.

The UTC UT150N06M is suitable for high efficiency

synchronous rectification in SMPS, UPS, hard switched and high

frequency circuits.

FEATURES

* RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=75A

RDS(ON) ≤ 5.0 mΩ @ VGS=4.5V, ID=50A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified