3.0A, 1800V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 3N180 provide excellent RDS(ON), low gate charge

and operation with low gate voltages. This device is suitable for

use as a load switch or in PWM applications.

FEATURES

* RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=1.5A

* Low Reverse Transfer Capacitance

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness