10.5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION

The UTC UT2013 is a N-channel Power MOSFET, designed

to minimize the on-state resistance (RDS(ON)), yet maintain superior

switching performance, making it ideal for high-efficiency power

management applications.

FEATURES

* RDS(ON) ≤ 11 mΩ @ VGS=4.5V, ID=8.5A

RDS(ON) ≤ 15 mΩ @ VGS=2.5V, ID=8.5A

RDS(ON) ≤ 25 mΩ @ VGS=1.8V, ID=1.0A

RDS(ON) ≤ 50 mΩ @ VGS=1.5V, ID=0.5A

* Low RDS(ON) – Ensures On-State Losses Are Minimized