GALLIUM NITRIDE (GaN) ENHANCEMENT-MODE POWER TRANSISTOR
DESCRIPTION
The UTC UGN65R150 is an enhancement mode GaN on
Silicon power transistor. provides high breakdown voltage, high
current and high operating speed which is suitable for high power
applications.
FEATURES
* RDS(ON) ≤ 178 mΩ @ VGS=10V, ID=5.0A
* 650V enhancement mode power transistor
* High operating frequency
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