DESCRIPTION

The UTC UGN65R350 is a gallium nitride (GaN) FETs power

devices offers the most efficient GaN solution with lifetime reliability

and cost advantages. GaN transistors switch much faster than

silicon MOSFETs, offering the potential to achieve lower-switching

losses.

FEATURES

* RDS(ON) ≤ 448.5 mΩ @ VGS=6.0V, ID=5.0A

* High BVDSS (>650V) Rating for Power Application

* Low Input Capacitance; Low FOM

* No reverse recovery charge

* Reverse conduction capability

* High operating frequency