DESCRIPTION

SiC The material can achieve high voltage with most carrier

devices (MOSFET) with fast device structure characteristics, so it

can realize the three characteristics of "high voltage", "low on

resistance" and "high frequency" at the same time.

It is widely used in electric vehicle charger, industrial equipment

power supply, efficient power regulator inverter and rectification part

and other uses.

FEATURES

* RDS(ON) ≤ 18 mΩ @ VGS=18V, ID=80A

* High Blocking Voltage

* High Frequency Operation

* Low on-resistance

* Fast intrinsic diode with low reverse recovery

* 100% avalanche tested