-2.0A, -100V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT2P10M is P-channel enhancement mode
Field-Effect Transistor (FET) using Trench MOSFET technology.
It using UTC’s are from silicon process technology to achieve the
lowest possible on-resistance and fast switching performance.
provides the designer with an extreme efficient device for use in a
wide range of power applications.
FEATURES
* RDS(ON) ≤ 800 mΩ @ VGS=-10V, ID=-1.0A
RDS(ON) ≤ 1000 mΩ @ VGS=-4.5V, ID=-1.0A
* High Switching Speed
* High Cell Density Trench Technology |