1200V TRENCH GATE FIELD-STOP IGBT
DESCRIPTION
The UTC UTG12N120HSS1 is an Trench Field-Stop Insulated
Gate Bipolar Transistor. it uses UTC’s advanced technology to
provide customers with high switching speed, low saturation
voltage and low switching loss, etc.
The UTC UTG12N120HSS1 is suitable for the resonant or soft
switching applications.
FEATURES
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT).Typ.=1.47V @ IC=12A, VGE=15V
(TC =25°C) |