DESCRIPTION

The UTC UGN70R180 is an enhancement mode GaN HEMT

power transistor. Provides high breakdown voltage, high current

and high operating speed which is suitable for high power

applications.

FEATURES

* RDS(ON) ≤ 225 mΩ @ VGS=12V, ID=4.0A

* Easy to use, compatible with standard gate drivers

* Excellent QG x RDS(ON) figure of merit (FOM)

* Low QRR, no free-wheeling diode required

* Low switching loss