N-CHANNEL SGT ENHANCEMENT POWER MOSFET

DESCRIPTION

The UTC USG10R800DMZ is a N-channel Power

MOSFET, it uses UTC’s advanced technology to provide the

customers with high switching speed and low gate charge,

etc.

The UTC USG10R800DMZ applies to primary side switch,

synchronous rectifier, Motor Drives, etc.

FEATURES

* RDS(ON) ≤ 80 mΩ @ VGS=10V, ID=4.0A

RDS(ON) ≤ 115 mΩ @ VGS=4.5V, ID=2.0A

* High Cell Density Trench Technology

* High Power and Current Handling Capability