N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG10R800MZM1 is a N-channel Power
MOSFET, it uses UTC’s advanced technology to provide the
customers with high switching speed and low gate charge,
etc.
The UTC USG10R800MZM1 applies to primary side
switch, synchronous rectifier, Motor Drives, etc.
FEATURES
* RDS(ON) ≤ 80 mΩ @ VGS=10V, ID=4.0A
RDS(ON) ≤ 115 mΩ @ VGS=4.5V, ID=2.0A
* MSL1 Robust Package Design
* High Cell Density Trench Technology
* High Power and Current Handling Capability
* Green & Pb-Free |