SILICON CARBIDE SCHOTTKY BARRIER DIODES
DESCRIPTION
The UCBD20120SA is an SiC Schottky barrier diodes (SBDs)
feature high reverse voltage ratings. In addition to SBDs with
short reverse recovery time (trr), provides 1200V SBDs with a
junction barrier Schottky (JBS) structure that provide low leakage
current (Ir) and high surge current capability required for
switched-mode power supplies. These devices help improve the
efficiency of switched-mode power supplies.
FEATURES
* Zero Reverse Recovery Current
* Humidity Resistant
* High Frequency Operation
* Temperature-Independent Switching Behavior |