DESCRIPTION

The UTC UT3P10M is P-channel enhancement mode

Field-Effect Transistor (FET) using Trench MOSFET technology.

It using UTC’s are from silicon process technology to achieve

the lowest possible on-resistance and fast switching performance.

provides the designer with an extreme efficient device for use in a

wide range of power applications.

FEATURES

* RDS(ON) ≤ 0.65 Ω @ VGS=-10V, ID=-3.0A

RDS(ON) ≤ 0.76 Ω @ VGS=-4.5V, ID=-1.5A

* High Switching Speed

* High Cell Density Trench Technology