DESCRIPTION

The UTC F7N60-ML is a N-Channel enhancement mode silicon

gate power MOSFET with Fast Body Diode. is designed high

voltage, high speed power switching applications such. such as

fast switching time, low gate charge, low on-state resistance and

high rugged avalanche characteristics.

FEATURES

* RDS(ON) ≤ 1.5 Ω @ VGS=10V, ID=3.5A

* Fast body diode MOSFET technology

* Low switching losses due to reduced Qrr

* Single Pulse Avalanche Energy Rated

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Avalanche energy tested