DESCRIPTION

The UTC UT1N04VZ employs advanced MOSFET technology

and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to

higher switching frequencies.

FEATURES

* RDS(ON) ≤ 230 mΩ @ VGS=10V, ID=1.0A

RDS(ON) ≤ 250 mΩ @ VGS = 4.5V, ID = 0.5A

RDS(ON) ≤ 350 mΩ @ VGS = 2.5V, ID = 0.3A

* Low Capacitance

* Low Gate Charge