DESCRIPTION

The USS2540M is NPN low VCE(SAT) transistor in a medium

power and flat lead X2DFN1006-3 Surface-Mounted Device

(SMD) plastic package.

PNP complement: USS3540M.

FEATURES

* Very low collector-emitter saturation voltage VCE(SAT)

* High collector current capability IC and ICM

* High collector current gain (hFE) at high IC

* High energy efficiency due to less heat generation