MOSFET

DESCRIPTION

SiC The material can achieve high voltage with most carrier

devices (MOSFET) with fast device structure characteristics, so it

can realize the three characteristics of "high voltage", "low on

resistance" and "high frequency" at the same time.

It is widely used in electric vehicle charger, industrial equipment

power supply, efficient power regulator inverter and rectification part

and other uses.

FEATURES

* RDS(ON) ≤ 440 mΩ @ VGS=15V, ID=4.0A

* Wide bandgap SiC MOSFET technology

* High Blocking Voltage with Low On-Resistance

* High Speed Switching with Low Capacitances

* High-Speed And High Robust Intrinsic Body Diode