| 650V TRENCH GATE FIELD-STOP IGBT
DESCRIPTION
The UTC UTG10N65LND1 is an Trench Field-Stop Insulated Gate
Bipolar Transistor. it uses UTC’s advanced technology to provide
customers with high switching speed, low saturation voltage and low
switching loss, etc.
The UTC UTG10N65LND1 is suitable for the resonant or soft
switching applications.
FEATURES
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=10A, VGE=15V
(TC =25°C) |