| 18A, 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC UT18NN03M is a N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with
low Rdson characteristic by high cell density trench technology.
FEATURES
* RDS(ON) ≤ 10 mΩ @ VGS=10V, ID=13A
RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=10A
* Fast Switching Speed
* Simple Drive Requirement |