DESCRIPTION

The UTC UT30N15M is a is a N-Channel enhancement mode

power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency fast switching applications.

FEATURES

* RDS(ON) ≤ 54 mΩ @ VGS=10V, ID=15A

* RDS(ON) ≤ 57 mΩ @ VGS=4.5V, ID=15A

* Improved dv/dt capability

* High Switching Speed

* Fast switching