DESCRIPTION

The UTC USG10R088H is a N-channel Power MOSFET, it

uses UTC’s advanced technology to provide the customers with

low RDS(ON) characteristic by high cell density trench technology.

FEATURES

* RDS(ON) ≤ 8.8 mΩ @ VGS = 10V, ID = 40A

* Extremely low on-resistance RDS(ON)

* Excellent Low Ciss