| N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG15R105HV is a N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with
low RDS(ON) characteristic by high cell density trench technology.
FEATURES
* RDS(ON) ≤ 10.5 mΩ @ VGS = 10V, ID = 50A
* Extremely low on-resistance RDS(ON)
* Excellent Low Ciss |